Deposition Techniques

NANO-MASTER's PECVD systems are capable of depositing high quality SiO2, Si3N4, CNT, DLC or SiC films. Depending on application, RF showerhead, Hollow Cathode, ICP or Microwave plasma sources can be used. The platen can accomodate up to 8" wafers and can be biased with RF, Pulsed DC or DC while being heated up to 800°C resistively or with IR lamps. The chamber is evacuated to 5x10-7 Torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump. The system utilizes LabVIEW PC control for full automation.

NANO-MASTER has developed the world's first table top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) system for GaN, InGaN and AlGaN deposition processes. In this unique system, having a plasma source N2 is used instead of NH3 for growing nitrides thus eliminating abatment of NH3 and lowering H2 content in the films. Plasma enhancement via RF showerhead plasma source also allows lower deposition temperatures (600°C versus 1100°C) making it possible to offer this process in a table top system.

Chemical Vapor Deposition Graphene System THERMO-CUTE